TRANSCEND 2GB DDR2 800 MHZ FOR NOTEBOOK

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  • Model TRANSCEND JM800QSU-2G
  • Availability: In Stock
  • AED 118.00

Transcend JM800QSU-2G JetRam 200PIN DDR2 800 SO-DIMM 2GB Memory Module With 128Mx8 CL6, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 400MHZ 800Mb/s/Pin., Posted /CAS, Programmable CAS Latency (4, 5, 6), Programmable Additive Latency (0, 1, 2, 3, 4, 5), UPC 7605578109402, Write Latency (WL) = Read Latency (RL)-1, Burst Length 4, 8 (Interleave/nibble sequential), Programmable sequential / Interleave Burst Mode, Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature), Off-Chip Driver (OCD) Impedance Adjustment, MRS cycle with address key programs, On Die Termination, Serial presence detect with EEPROM, RoHS compliant


General Information

Manufacturer

Transcend

Manufacturer Part Number

JM800QSU-2G

Product Name

JetRam 200PIN DDR2 800 SO-DIMM 2GB Memory Module With 128Mx8 CL6

UPC Code

7605578109402

Overview

The JM800QSU-2G is a 256M x 64bits DDR2-800 SO-DIMM. The JM800QSU-2G consists of 16pcs 128Mx8bits DDR2 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The JM800QSU-2G is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features

  • JEDEC standard 1.8V ± 0.1V Power supply
  • VDDQ=1.8V ± 0.1V
  • Max clock Freq: 400MHZ; 800Mb/s/Pin.
  • Posted /CAS
  • Programmable CAS Latency: 4, 5, 6
  • Programmable Additive Latency :0, 1, 2, 3, 4, 5
  • Write Latency (WL) = Read Latency (RL)-1
  • Burst Length: 4, 8(Interleave/nibble sequential)
  • Programmable sequential / Interleave Burst Mode
  • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
  • Off-Chip Driver (OCD) Impedance Adjustment
  • MRS cycle with address key programs.
  • On Die Termination
  • Refresh: Auto Refresh and Self Refresh Average Refresh Period: 7.8us at lower then TCASE 85°C
  • Serial presence detect with EEPROM
  • RoHS compliant

 

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