TwinMOS DDR3 1600 MHz ( Laptop 2GB)
- Model 2GB
- Availability: Out Of Stock
- AED 85.00
Features: VDD = VDDQ = 1.5V ±0.075V 1.5V center-terminated push/pull I/O Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based on tCK Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) Programmable CAS latency
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